Applied Physics Letters · 2001 · 65 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsCompound SemiconductorsDislocations In SemiconductorsIii-v SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsSilicon MaterialsCrystalline StructureDevice FabricationDislocation NetworksDislocationsEpitaxial MaterialsMisfit DislocationsMolecular Beam EpitaxyOptoelectronic Properties
We proposed a Si/III–V–N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1−xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1−xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates.
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations