Physical Review B · 2011 · 63 citations · 32 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSpectroscopyAb Initio MethodsNanowiresOptical Properties Of SemiconductorsRaman SpectroscopySelection RulesSemiconductor PhysicsAb Initio CalculationsAb Initio Few-body CalculationsElectronic Band GapElectronic Band TheoryPolarized Raman SpectroscopyRaman SpectraRaman TransitionsSemiconductor Nanowires
We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted ${E}_{1}$ transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the ${E}_{1}$ transitions.
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T. C. Damen, S. P. S. Porto, B. Tell · Physical Review · 1966 · 2K citations
Growth and optical properties of nanometer-scale GaAs and InAs whiskers
K. Hiruma, M. Yazawa, T. Katsuyama et al. · Journal of Applied Physics · 1995 · 632 citations