Surface morphology of poly-Si films made by aluminium-induced crystallisation on glass substrates

Optical properties of intrinsic silicon at 300 K

Martin A. Green, Mark Keevers · Progress in Photovoltaics Research and Applications · 1995 · 1.3K citations

Natural Sciences, Materials Science, Physics +17

Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization

Oliver Nast, Stuart Wenham · Journal of Applied Physics · 2000 · 352 citations

Natural Sciences, Materials Engineering, Materials Science +17

Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature

Oliver Nast, T. Puzzer, L. Koschier et al. · Applied Physics Letters · 1998 · 327 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°K

C. J. Meechan, J. A. Brinkman · Physical Review · 1956 · 279 citations

Natural Sciences, Materials Science, Physics +16

Evolution of Ge islands on Si(001) during annealing

T. I. Kamins, G. Medeiros‐Ribeiro, Douglas A. A. Ohlberg et al. · Journal of Applied Physics · 1999 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +17