Chinese Physics Letters · 2008 · 14 citations · 27 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsNanostructured Electronic MaterialsQuantum ConfinementQuantum DotsQuantum OptoelectronicsSemiconductor NanomaterialsStrain EngineeringFine-structure SplittingFull Width At Half MaximumPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot PhotophysicsSemiconductor Quantum DotsUniaxial Compressive StrengthUniaxial Strain
We report a photoluminescence (PL) energy red-shift of single quantum dots (QDs) by applying an in-plane compressive uniaxial stress along the [110] direction at a liquid nitrogen temperature. Uniaxial stress has an effect not only on the confinement potential in the growth direction which results in the PL shift, but also on the cylindrical symmetry of QDs which can be reflected by the change of the full width at half maximum of PL peak. This implies that uniaxial stress has an important role in tuning PL energy and fine structure splitting of QDs.
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