Applied Physics Letters · 2007 · 33 citations · 13 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Band StructureQuantum WellsSemiconductor HeterostructuresSpintronicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsHeterostructure DevicesHeterostructure MaterialsMagnetism In Two-dimensional SemiconductorsQuantum Well HeterostructuresShubnikov-de Haas OscillationsSpin Dynamics In SemiconductorsSpin PrecessionSpin-orbit Splitting
The spin splitting energy obtained from the Shubnikov–de Haas oscillation increases with decreasing channel width (w) of the InAs-based heterostructure. Since the surface charge concentration depends only weakly on w, the channel width dependence of the spin splitting energy is attributed to variations in the spin-orbit interaction strength. The spin-orbit interaction parameter was found to be inversely proportional to w in the range of w=2–64μm. Our findings indicate that a strong spin-orbit interaction is induced in a narrow channel due to suppression of the spin precession length for a thin quantum well layer system.
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Electronic analog of the electro-optic modulator
Supriyo Datta, Biswajit Das · Applied Physics Letters · 1990 · 4.8K citations
Electrical detection of spin precession in a metallic mesoscopic spin valve
F. J. Jedema, H. B. Heersche, A. T. Filip et al. · Nature · 2002 · 706 citations