Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers

Abstract

SiGe -on-insulator structures have been fabricated by wafer bonding and layer transfer techniques. The relaxation process of the compressively strained SiGe films bonded to SiO2 layers through the rapid thermal oxidation was investigated. Buckling nucleus were randomly located at the beginning of oxidation and the buckling undulation was well developed after 30s oxidation at 960°C. The buckling amplitude increases with the increasing thermal oxidation time. An emission peak at 1.5μm was observed in the low temperature photoluminescence of the buckled SiGe layers.