Transformation of native defects in bulk GaAs under ultrasonic vibration

Abstract

The effect of high-intensity ultrasonic vibration on the spectrum of deep electron traps in bulk n-type GaAs has been studied by means of deep-level transient spectroscopy. The ultrasonic treatment results in a drastic reduction of the EL6 trap concentration and a generation of three other traps, suggesting an ultrasound-driven transformation of defects associated with the traps. It is argued that the traps EL6, EL5 and EL18 are associated with the following native defects: AsGa-VAs, VGa-VAs and VGa respectively. The defect transformations are described by two reactions involving emission of arsenic interstitials.