Hydrogen Anneal Effects on Metal‐Semiconductor Work Function Difference

Abstract

The effects of process parameters, particularly postmetallization hydrogen anneal treatments of aluminum gated MOS structures, on the metal‐semiconductor work function difference were investigated. Apparent variations in exceeding 500 mV have been observed for a given silicon type (n or p). These variations are dependent on the processing of the structures and the silicon orientation, and are reflected in the density of interface traps measured. It is postulated that chemisorbed atomic hydrogen at the silicon‐silicon dioxide interface resulting from the postmetallization anneal treatment reduces the density of interface traps, as measured by the quasi‐static technique, and changes the measured values of .