Anisotropic kinetics and bilayer epitaxial growth of Si(001)

Abstract

The epitaxial growth kinetics of Si(001) are investigated by the application of a Monte Carlo simulation, with explicit incorporation of the anisotropic bonding induced by the (2\ifmmode\times\else\texttimes\fi{}1) dimer reconstruction. The model produces a pseudobilayer growth mode on a single-domain substrate and resolves apparently contradictory observations of Si homoepitaxial growth reported earlier by different groups.