Review of Scientific Instruments · 1986 · 58 citations · 3 references
EngineeringElectrical EngineeringMaterials EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsOptical DetectorsOptical Properties Of SemiconductorsOptical TomographyPhotodetectorsSemiconductor DetectorsDetectionImaging DetectorsInfrared CamerasLight ScatteringPhotodiode ArraysScattering TomographySemiconducting CrystalsSignal-to-noise Ratio
An electrical streak camera has been developed for IR imaging. Integration for noise reduction and subtraction of dark current were successfully performed using a 16-bit personal computer, improving the signal-to-noise ratio of a PbO–PbS visicon for IR detection. In this paper, the camera was applied to infrared light-scattering tomography for characterization of semiconductor crystals such as GaAs, InP, and CdTe crystals. In this streak camera, the IR detector can be replaced by a photodiode array such as HgCdTe, to detect even much longer wavelength radiation, which will be useful to study some electronic centers in semiconductors.
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