A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.4K citations

Engineering, Electrical Engineering, Recombination +15

Electron-Hole Recombination in Germanium

R. N. Hall · Physical Review · 1952 · 2.7K citations

Natural Sciences, Materials Science, Physics +7

Auger coefficients for highly doped and highly excited silicon

J. Dziewior, W. Schmid · Applied Physics Letters · 1977 · 798 citations

Engineering, Materials Science, Optoelectronics +15

Angular Distributions of (α, <i>n</i>) Reaction son Be and C

M. Kondo, Takashi Yamazaki, Shôtaro Yamabe · Journal of the Physical Society of Japan · 1963 · 241 citations

Natural Sciences, Physics, Nuclear Chemistry +10

Radiation Effects in Semiconductors

P. J. Dean · Physics Bulletin · 1972 · 229 citations

Engineering, Electrical Engineering, Materials Science +12