Nonlinear transport properties in multiwall carbon nanotube heterojunctions

Abstract

Electronic transport properties of a heterostructure junction made of two different multiwall carbon nanotubes are studied. Independent measurement of the current–voltage characteristics of each nanotube revealed that both of them were lightly p-doped semiconductors with energy gaps whose magnitudes are widely different from each other. The current–voltage characteristics measured across the heterojunction show reproducible rectifying diode behavior. The forward bias current across the heterojunction increases rapidly with the application of a positive gate bias voltage, implying an n-type gate response.