Nanotechnology · 2009 · 23 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsThin FilmsElectrode MaterialsElectronic Material CharacterizationMemristive MaterialsThin Film Electrical PropertiesThin-film MaterialsX-ray Photoelectron SpectroscopyAmorphous Semiconductor FilmsMicroscopic CharacterizationOxide Memristive MaterialsResistive SwitchingResistive Switching MaterialsSemiconductor Oxide Thin FilmsSheet Resistance
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.
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Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al. · Nature · 2008 · 11.5K citations
Engineering, Electrical Engineering, Electronic Materials +5
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Natural Sciences, Electrical Engineering, Materials Science +17