Thermoelectric Properties of CeRu₄P₁₂ and CeOs₄P₁₂ with Filled Skutterudite-Type Structure

Abstract

The thermoelectric properties of hybridized band-gap semiconductor CeRu 4 P 12 and CeOs 4 P 12 with the filled skutterudite-type structure have been studied. Skutterudites have been identified recently as promising candidates for thermoelectric applications such as in solid-state refrigeration or power generation. Polycrystalline samples of CeRu 4 P 12 and CeOs 4 P 12 were synthesized with a high-pressure cell under high temperature using a cubic-anvil high-pressure apparatus. The samples were characterized by X-ray diffractometry. The Seebeck coefficient, electrical resistivity, Hall coefficient and thermal conductivity were measured. The Seebeck coefficients of both compounds are significantly large and the power factor values are of the order of 10 -3 W/mK 2 . The effect of hybridization between the Ce 4f and pnicogen p states or transition metal d states is important for determining the thermoelectric properties of this system.