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Three-dimensional Monte Carlo calculation of the VUV electroluminescence and other electron transport parameters in xenon
66
Citations
24
References
1994
Year
PhotoluminescenceEngineeringMonte-carlo ModellingPhysicsMonte CarloScintillatorGaseous XenonApplied PhysicsVuv ElectroluminescenceSecondary Scintillation ProductionElectron SpectroscopyXenon Excitation CollisionsCosmic RaySynchrotron RadiationCharge TransportOptoelectronicsSynchrotron Radiation Source
The paper presents a set of electroluminescence and other transport parameters calculated using a detailed three-dimensional Monte Carlo method, which simulates the drift of electrons in gaseous xenon (p=760 Torr, T=293 K) under reduced electric fields E/N in the 3 to 16 Td range (E/P approximately 1 to 5 V cm-1 Torr-1), which is the region for secondary scintillation production in xenon filled gas proportional scintillation counters. Results are compared with available experimental or theoretical data as well as an earlier one-dimensional Monte Carlo simulation. The calculated parameters are the excitation and scintillation efficiencies and the reduced light yield, together with mean time intervals, mean drift distances and mean number of elastic collisions between xenon excitation collisions. The authors also present electron drift velocities, mobilities and characteristic energies, as well as mean electron energy and electron energy distribution functions.
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