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Interfacial Reactions in Plasma‐Grown Native Oxide ‐ GaAs Structures
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1980
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Materials ScienceSemiconductorsInterfacial ReactionsArsenic GrowthEngineeringRaman ScatteringSurface ScienceApplied PhysicsChemical Vapor DepositionChemistryThin FilmsChemical DepositionEpitaxial GrowthCompound SemiconductorElemental ArsenicThin Film Processing
The presence and growth of elemental arsenic in as‐grown and thermally annealed plasma oxidized films have been studied using Raman scattering and x‐ray photoemission. The origin of arsenic growth observed in the annealed samples is fully consistent with the presence of a thermodynamically driven interfacial reaction involving in the film and the substrate. The products of this reaction are and As.