Journal of the American Chemical Society · 2003 · 344 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologySemiconductor MaterialsNanoelectronicsNanomaterials SynthesisNanostructured Electronic MaterialsNanotubesSemiconductor Device MaterialsSemiconductor NanomaterialsAluminum Gallium NitrideAluminum NitrideGallium Nitride (Gan) Materials
The synthesis of the faceted single-crystalline h-AlN nanotubes with the length of a few micrometers and diameters from 30 to 80 nm is first reported. This provides an ideal substrate for the construction of GaN-based nanoheterostructures in future nanoelectronics. The experimental results suggest the further extensive experimental and theoretical studies on the promising nonlayered nanotubular structures.
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