Metalorganic Chemical Vapor Deposition of YBa₂Cu₃O_x Thin Films Using Bis-Dipivaloylmethanato-Barium Bis-Tetraethylenepentamine Adducts as a Novel Barium Source

Abstract

We have prepared YBa 2 Cu 3 O x thin films by metalorganic chemical vapor deposition using bis-dipivaloylmethanato-barium bis-tetraethylenepentamine adducts ( Ba(DPM) 2 -tetraen 2 ) as a new Ba precursor. This precursor has much higher volatility than typical Ba sources such as Ba(DPM) 2 . A deposition rate of approximately 50 nm/h is achieved when the vaporizing temperature of Ba(DPM) 2 -tetraen 2 is set at 140° C. This is seven times faster than that achieved using Ba(DPM) 2 at a vaporizing temperature of 187° C. A 200-nm-thick film grown on a MgO(100) substrate has a minimum channeling yield of 6%. The compositional deviation of the films is ±4% for up to 100 h of use.