Publication | Open Access
Study on the Resistance Characteristic of Pt Thin Film
27
Citations
7
References
2012
Year
Thin Film PhysicsEngineeringThin Film Process TechnologyVacuum DeviceSurface TechnologyPt Thin FilmThin Film ProcessingThin-film TechnologyMaterials ScienceElectrical EngineeringThin Film MaterialsHigh Temperature MaterialsSpecific ResistanceFilm ThicknessSurface ScienceApplied PhysicsThin Film DevicesThin FilmsThermal Resistor
In this paper, Pt thin film was prepared as thermal resistor in bolometer. The measurements showed that the vacuum annealing proved to be an effect method to gain good resistance-temperature properties. The temperature coefficient of resistance (TCR) of resistance 1.28KΩ can be improved by vacuum annealing to achieve 1.737‰/K.What is obtained by experiment is that the values of TCR will be affected not only by annealing parameters, but also by the film thickness used, the films with 100 nm thickness can achieve 2.3‰/K, while that with 17 nm can only get 1.1‰/K.
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