The Growth and Characterization of Very Thin Silicon Dioxide Films

Abstract

Very thin oxides (30–140Å) have been prepared by oxidizing silicon at 900°–1000°C at reduced pressure (0.25–2.0 Torr). The oxidation rate is parabolic. The oxides have been characterized by ellipsometry, infrared spectroscopy, Auger spectroscopy, etch rate variation, and breakdown voltages. The thin, low pressure oxides have properties similar to those of thicker oxides prepared at atmospheric pressure. The intrinsic breakdown fields are high (10–13 MV/cm) and distributed over a very narrow range. The ellipsometric, etch rate, and Auger data indicate a thin interfacial region <15Å thick, but such a region is not detected in the infrared spectra.