Effects of Water Vapor on Oxidation of Silicon Carbide

Abstract

The rate of oxidation of silicon carbide was studied at different partial pressures of water vapor. The diffusion‐rate constant was found to vary with the logarithm of the partial pressure of water vapor according to the theory of thin‐film oxidation as proposed by Engell and Hauffe. The products of oxidation were cristobalite and tridymite, depending on the temperature. The diffusing species appeared to be the same in the presence of partial pressures of water vapor and in the presence of partial pressures of oxygen.