Applied Physics Letters · 1998 · 84 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsElectronic MaterialsThin FilmsDielectric CeramicsDielectricsElectrical Properties Of CeramicsThin Film AnnealingThin Film Electrical PropertiesThin-film MaterialsAnnealing EffectsAnnealing Temperature EffectsCapacitanceOxygen VacanciesOxygen Vacancies In Metal OxidesStrontium Barium TitanateThin Oxide FilmsThin-film Oxides
We have investigated the dependence of leakage current and capacitance of Pt/Ba0.5Sr0.5TiO3/Pt capacitors on annealing temperature under high vacuum conditions. It is observed that leakage currents increase asymmetrically for negative and positive bias voltage with increasing annealing temperature. A model of leakage current and capacitance characteristics has been proposed on the assumption of generation of oxygen vacancies by annealing at the interfaces of the dielectric film adjacent to the Pt electrodes. The model predicts the oxygen vacancies of about 1020 cm−3.
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Metallization induced band bending of SrTiO3(100) and Ba0.7Sr0.3TiO3
M. Copel, P. R. Duncombe, D. Neumayer et al. · Applied Physics Letters · 1997 · 103 citations