Publication | Closed Access
Auger profiling of ’’abrupt’’ LPE Al<i>x</i>Ga1−<i>x</i>As-GaAs heterojunctions
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Citations
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References
1977
Year
SemiconductorsMaterials ScienceAluminium NitrideAuger ProfilingEngineeringPhysicsApplied PhysicsQuantum MaterialsChemical Interface WidthsComposition X=0.43Chemical WidthsCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor
Ion milling–Auger electron spectroscopy has been used to study, for the first time, the chemical widths of ’’abrupt’’ LPE AlxGa1−xAs-GaAs heterojunctions with composition x=0.43, 0.60, and 0.85. ’’Abrupt’’ LPE junctions were found to have chemical interface widths of &lt;90–130 Å.
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