Van der Waals Growth of Thin TaS₂on Layered Substrates by Chemical Vapor Transport Technique

Abstract

Thin TaS2 has been prepared by the van der Waals growth technique coupled with the chemical vapor transport technique using the I2 agent. Hexagonal boron nitride (h-BN) and mica, which have layered crystal structures, were used as substrate materials. Thin TaS2 was grown on layered substrates sealed in a quartz ampoule. A high-resolution X-ray diffractometer with a four-crystal monochrometer revealed that very thin 2H-TaS2 film was grown on the surface of the Ag/BN substrate at 300°C, where Ag was evaporated on the h-BN substrate surface prior to the film growth. As for the mica substrate, very thin 2H-TaS2 was grown on the substrates with and without Ag modification.