Conditions for OMVPE Growth of GaInAsP/InP Crystal

Abstract

The conditions required for the growth of GaInAsP/InP by organometallic vapor-phase epitaxy (OMVPE) covering the available bandgap wavelength of 1.3–1.6 µm were obtained experimentally with a carefully-arranged experimental set-up. The precision required in controlling the gas flows and temperatures for lattice matching is discussed. The relations between alloy compositions and source gas flow ratios were investigated, as well as p-n junctions. Lasing operation at a wavelength of 1.58 µm was achieved with GaInAsP/InP grown under these growth conditions.