A lateral magnetotransistor structure with a linear response to the magnetic field

Abstract

An experimental study and analytical model of a novel magnetotransistor are presented. This device displays some very promising features. A linear response to the magnetic field is experimentally demonstrated and very high sensitivities are measured, on the order of 3000%/T. Previous comparable magnetotransistors have reported sensitivities on the order of 150%/T. A theoretical explanation of the very high sensitivity is proposed, involving carrier deflection as the dominant operating principle.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>