A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides

Abstract

Synchrotron-radiation photoemission data from the Si(111)/Gd interface (Si 2p/Gd 4 f core levels and valence states) are compared with those from all of the silicides in the Si–Gd phase diagram (Gd3Si5, GdSi, Gd5Si3) measured in strictly comparable conditions. It is shown that the first silicide-like reaction product is formed for a Gd coverage of about 2 monolayers and that this interface silicide-like product is correlated with GdSi. These results are also discussed in connection with the Si(111)/Yb interface where the same experimental approach shows a correlation between the first silicide-like interface product and the metal-rich silicide.