Journal of the Optical Society of America · 1972 · 47 citations · 16 references
Natural SciencesMaterials SciencePhysicsOptical MaterialsOpticsThin FilmsOptical Properties Of SemiconductorsOptical Properties Of SolidsOptical Thin FilmsRefractive IndexSilicon MaterialsThin Film Optical PropertiesEllipsometryLight-absorbing LayersOptical ConstantsOptical Properties EstimationSilicon CharacterizationSilicon Optical PropertiesThickness-dependent Optical PropertiesThin-film Optical Characterization
A new generalized method of determining all optical parameters of the system of an optically absorbing substrate covered by a transparent film is described. This is based on the successful numerical inversion of Drude’s exact ellipsometric equation. The input data of Δ and ψ can be obtained either by the use of different film thicknesses or of one film but with different ambients or multiple angles of incidence, or by any combination of these measurements. The method has been applied to the case of silicon for 3655 Å and the optical constants (n2–ik2) of silicon were found to be n2 = 6.66±0.02 and k2 = 2.22±0.04.
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Optical Constants of Silicon in the Region 1 to 10 ev
H. R. Philipp, E. A. Taft · Physical Review · 1960 · 562 citations
Electronic Spectra of Crystalline Germanium and Silicon
David Brust · Physical Review · 1964 · 448 citations
Band Structure of Silicon from an Adjusted Heine-Abarenkov Calculation
E. O. Kane · Physical Review · 1966 · 242 citations