Monte Carlo Simulation of Energetic Ion Behavior in Amorphous Targets

Abstract

A Monte Carlo calculation procedure for simulating the scattering processes of an energetic ion in amorphous targets is given. This computer program can be extended to any ion-target combination up to several MeV incident energy. A high degree of simulation accuracy is obtained independently of incident energy within a reasonable amount of computer time at high as well as low incident energies. Good agreement is obtained in the comparison with calculated depth distributions for implanted ions with the experiments and other Monte Carlo results.