Spectroscopic diagnostic of an argon hydrogen RF inductive thermal plasma torch at atmospheric pressure used for silicon hydrogenation

Abstract

Hydrogenation of silicon materials has great advantages for its photovoltaic properties and is the key to elimination of crystalline defects during basaltic growth of the crystal. It is therefore interesting to characterize the plasma by optical emission spectroscopy methods in order to study hydrogenation of silicon particles during their treatment by an inductive thermal plasma burning in the Ar–H2 mixture.