Noncontact energy level analysis of metallic impurities in silicon crystals

Abstract

Noncontact laser/microwave deep level transient spectroscopy (LM-DLTS) based on the measurement of microwave reflection power as a function of temperature has been developed and applied to Czochralski silicon crystals intentionally contaminated with selected metals during crystal growth. The energy levels related to these metallic impurities in p-type silicon have been obtained on bare silicon for the first time without any electrode contact or special sample preparation. The data agree in very satisfactory fashion with results obtained by conventional DLTS.