Applied Physics Letters · 1996 · 67 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionOptical Properties Of SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSolar Cell MaterialsSolar CellsAbsorber MaterialsExcitationLight-absorbing LayersPhotoluminescencePhotoluminescence SpectroscopyPolycrystalline Thin FilmsSolar Cell CharacterizationThin-film Solar Cells
The photoluminescence of CuInSe2 thin films grown by multisource physical vapor deposition is investigated over a wide composition range with a specially designed sample. Measurements as a function of excitation intensity, and temperature are correlated with the Cu/In ratio x of the films ranging from 1.47≤x≤0.46. All the Cu–rich samples (x≳1.0) show well-defined peak positions independent of the composition. In the slightly In-rich region (x=0.90) where the best absorber layers for high efficiency CuInSe2 solar cells are expected, two broad emission lines are ascribed to donor-acceptor pair transitions. For very In-rich samples (x<0.67), a blue shift of the dominant transition is observed.
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