Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy

Abstract

Atomic layer epitaxy has been employed to produce good-quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic emission lines and a very weak deep center emission band.