Plasma-Enhanced Atomic Layer Deposition of Ni

Abstract

Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb) 2 ] as a precursor and NH 3 or H 2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH 3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH 3 plasma was clearly different with that using H 2 , probably due to the effects of NH x radicals.