Densification, Crystallization, and Dielectric Properties of <scp> <scp>AlN</scp> </scp> , <scp> <scp>BN</scp> </scp> , and <scp> <scp>Si</scp> </scp> ₃ <scp> <scp>N</scp> </scp> ₄ Filler‐Containing <scp>LTCC</scp> Materials

Abstract

Glass composite dielectrics consisting of calcium aluminoborosilicate glass and nitride fillers such as aluminum nitride, boron nitride, and silicon nitride ( AlN , BN , and Si 3 N 4 ) were investigated. Densification and crystallization behavior depended on the type of filler, filler content, and firing temperature. AlN was most promising in generating desirable densification and dielectric properties ( k of ~7.2 and tanδ of ~0.003) at 850°C with progressive crystallization of common anorthite phase. BN tended to show no significant densification and suppression of crystallization. Si 3 N 4 resulted in abnormal behavior of densification, which can be highlighted with certain expansion at higher temperatures, as well as unexpected crystallization of CaSiO 3 and CaAl 2 SiO 6 .