Quick Deposition of ZuS:Mn Electroluminescent Thin Films by Intense, Pulsed, Ion Beam Evaporation

Abstract

Electroluminescent ZnS:Mn thin films have been guickly deposited by a high-density, high-temperature plasma produced by the irradiation of an intense (>GW/cm 2 ), pulsed (∼tens of ns) ion beam onto a ZnS:Mn target. The films prepared on a glass substrate have a polycrystalline hexagonal structure. The temperature of the target plasma was estimated to be ∼2.7 eV, where the plasma was highly ionized. The instantaneous deposition rate was estimated to be ∼4 cm/s, which is at least five orders of magnitude higher than that of any other conventional evaporation techique. We have prepared a ZnS:Mn electroluminescent device with a luminescent layer having a thickness of ∼200 nm. The device has a threshold voltage of ∼80 V 0p (zero to peak value). The maximum luminance of 195 cd/m 2 has been obtained under 10 kHz sinusoidal excitation at 144 V 0p .