Efficient electron-beam-deposited ITO/<i>n</i>-Si solar cells

Abstract

Indium tin oxide/silicon heterojunction solar cells with power conversion efficiencies of 10% in AM1 solar spectrum were fabricated. The indium tin oxide (ITO) films were deposited onto n-type silicon by electron-beam evaporation of a mixture of 90 : 10 molar% In2O3 : SnO2 powder. As in SnO2/n-Si cells, the efficiencies of these cells depend upon the angle of incidence of the ITO vapor stream to silicon. We have found the photovoltaic properties of these cells to be very similar to those of SnO2/n-Si devices.