Applied Physics Letters · 2014 · 84 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesInfrared DetectorsOptical DetectorsPhotodetectorsSemiconductor DetectorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDark CurrentDetector Quantum EfficiencyHeterostructure OptoelectronicsHeterostructure PhotodetectorsInfrared PhotodetectorsPhotodiodesQuantum EfficiencyResponsivity
Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 μm. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at −300 mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 × 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.
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Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 306 citations