New compounds with MgAgAs-type structure: NbIrSn and NbIrSb

Abstract

NbIrSn and NbIrSb crystallize in a cubic MgAgAs-type structure with lattice parameters of 617.76(2) and 614.97(2) pm, respectively. Both compounds exhibit incongruent melting behaviour. NbIrSn is a p-type semiconductor with an energy gap of 0.28 eV. At room temperature, it has a Seebeck coefficient of and a resistivity of . NbIrSb is metallic with and at room temperature. The formation of the solid solutions has been confirmed.