Strong‐Field Hopping in Disordered Semiconductors A Problem of Directed Percolation

Abstract

Abstract Starting from a density matrix formulation the hopping current induced by phonons and a strong electric field in disordered semiconductors is discussed in dependence on the temperature and the electric field strength. The treatment of the corresponding rate equation makes use of the directed percolation method. Essential informations about the non‐ohmic behaviour can be obtained from the analysis of the vertex star.