Applied Physics Letters · 2014 · 28 citations · 33 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsIii-v SemiconductorsSemiconductor DefectsStacking FaultsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCarrier Lifetime MeasurementCarrier Mobility-lifetime ProductExciton DynamicsExciton PhysicsExcitonsExcitons In Nanomaterials
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Stephan Furthmeier, Florian Dirnberger, Joachim Hubmann, Benedikt Bauer, Tobias Korn, Christian Schüller, Josef Zweck, Elisabeth Reiger, Dominique Bougeard; Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires. Appl. Phys. Lett. 1 December 2014; 105 (22): 222109. https://doi.org/10.1063/1.4903482 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
33
VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH
Ricarda Wagner, W. C. Ellis · Applied Physics Letters · 1964 · 6.7K citations
Controlled polytypic and twin-plane superlattices in iii–v nanowires
Philippe Caroff, Kimberly A. Dick, Jonas Johansson et al. · Nature Nanotechnology · 2008 · 693 citations