Applied Physics Express · 2011 · 49 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsThin FilmsFerromagnetic MaterialsFerromagnetismMagnetic AnisotropyMagnetic OxidesMagnetic Properties Of SolidsSpintronicsAnnealingMagnetic HeterostructuresMagnetic Tunnel JunctionsMagnetization In Thin FilmsMagnetoresistanceMultilayer Magnetic FilmsThickness DependenceTunnel Magnetoresistance
The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-Ta annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.
14