The use of charge pumping currents to measure surface state densities in MOS transistors

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Engineering, Electrical Engineering, Physics +12

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

Surface states at steam-grown silicon-silicon dioxide interfaces

C. N. Berglund · IEEE Transactions on Electron Devices · 1966 · 671 citations

Engineering, Electrical Engineering, Materials Science +17

A quasi-static technique for MOS C-V and surface state measurements

Markus Kühn · Solid-State Electronics · 1970 · 553 citations

Natural Sciences, Materials Science, Physics +13

Charge pumping in MOS devices

J.S. Brugler, P.G.A. Jespers · IEEE Transactions on Electron Devices · 1969 · 499 citations

Engineering, Electrical Engineering, Materials Science +17