IEEE Journal of Selected Topics in Quantum Electronics · 2015 · 40 citations · 32 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesLight SourcesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor NanomaterialsExtraction EfficiencyGallium Nitride Light-emitting DiodesLight ExtractionLight Extraction EfficiencyLight-emitting DevicesNanorodsPhotolithographyPower Output
High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.
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