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Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier

Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceLight-emitting DiodesCategoryiii-v SemiconductorOptoelectronics