Applied Physics Letters · 1969 · 24 citations · 6 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSolid State PhysicsCrystallographyElectronic StructureNanostructured MaterialsSilicon MaterialsSilicon NanostructuresSilicon Physics
The Si(111) 7 × 7 structure has been observed within 9 sec of cleaving Si crystals at 850°C. Analysis shows that sufficient Fe to be regarded as essential for the structure cannot diffuse from the bulk in the time, although Li or Cu could. Sufficient contamination to form 1% of a monolayer could form by surface diffusion from the crystal sides, provided surface diffusion coefficients considerably greater than 5 × 10−5 cm2 sec−1 at 750°C were applicable.
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