Polarization switching of the optical gain in semipolar InGaN quantum wells

Abstract

Abstract We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self‐consistent 6 × 6 k · p ‐band structure calculations. The semipolar planes considered here are the $(11\bar {2}2)$ ‐ and the $(20\bar {2}1)$ ‐plane. In contrast to the $(20\bar {2}1)$ ‐plane, the dominant polarization of the optical gain in a QW on the $(11\bar {2}2)$ ‐plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW.