IEEE Electron Device Letters · 2015 · 12 citations · 7 references
EngineeringDevice IntegrationOptoelectronic DevicesIntegrated CircuitsPhotovoltaic SystemPower ElectronicsPhotovoltaicsInterconnect (Integrated Circuits)Junction PeriodElectronic DevicesElectrical EngineeringSolar PowerSemiconductor Device FabricationMicroelectronicsInterdigitated JunctionsApplied PhysicsBuilding-integrated PhotovoltaicsBack Metal ReflectorOptoelectronicsBeyond CmosSolar Cell Materials
Improved performance in CMOS interdigitated back-contact photovoltaic devices (IBC-PVs) is demonstrated by utilizing interdigitated junctions and a back metal reflector to simultaneously achieve large total junction area, uniform series resistance, and high optical back reflection. Enhanced ultimate efficiency of 20.33% is experimentally obtained from a 35-μm thick CMOS IBC-PV with a junction period of 7.2 μm under 980-nm illumination. Since the proposed IBC-PVs are implemented by standard bulk CMOS process, it can be easily integrated with other microelectronics to realize a self-power system for a variety of applications.
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Generation 3: Improved performance at lower cost
P.J. Cousins, David Smith, Hsin-Chiao Luan et al. · 2010 · 209 citations