Band structure modulation by carrier doping in random-network carbon nanotube transistors

Abstract

We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70meV for hole and 100meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.