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Negative differential resistance in InAs/GaSb single-barrier heterostructures
35
Citations
5
References
1989
Year
Wide-bandgap SemiconductorRoom TemperatureEngineeringSpecific ResistancePhysicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsGasb Valence BandSemiconductor MaterialMultilayer HeterostructuresCategoryiii-v SemiconductorTopological HeterostructuresNegative Differential Resistance
We report the first observation of negative differential resistance (NDR) at room temperature in InAs/GaSb barrier heterostructures, where the conduction band in InAs lies below the GaSb valence band.
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